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IRFR5305TRPBF
Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252AA, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRFR5305TRPBFCopy |
| Manufacturer Standard Lead Time | 14 weeks |
| Order Code | 2097998 |
| Product Range | HEXFET Series |
| Also Known As | SP001557082 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | RM6.870 |
| 10+ | RM3.230 |
| 100+ | RM2.880 |
| 500+ | RM2.260 |
| 1000+ | RM2.220 |
| 5000+ | RM2.170 |
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Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRFR5305TRPBFCopy |
| Manufacturer Standard Lead Time | 14 weeks |
| Order Code | 2097998 |
| Product Range | HEXFET Series |
| Also Known As | SP001557082 |
| Technical Datasheet | |
| Channel Type | P Channel |
| Drain Source Voltage Vds | 55V |
| Continuous Drain Current Id | 31A |
| Drain Source On State Resistance | 0.065ohm |
| Transistor Case Style | TO-252AA |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 4V |
| Power Dissipation | 110W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | HEXFET Series |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (04-Feb-2026) |
Product Overview
The IRFR5305TRPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques.
- Ultra low on-resistance
- Advanced process technology
- Fully avalanche rated
Applications
Power Management
Technical Specifications
| Channel Type | P Channel |
|---|---|
| Continuous Drain Current Id | 31A |
| Transistor Case Style | TO-252AA |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 110W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (04-Feb-2026) |
| Drain Source Voltage Vds | 55V |
|---|---|
| Drain Source On State Resistance | 0.065ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 4V |
| No. of Pins | 3Pins |
| Product Range | HEXFET Series |
| MSL | - |
Technical Docs (3)
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (04-Feb-2026) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .00023 |