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IRLB8314PBF
Power MOSFET, N Channel, 30 V, 171 A, 2400 µohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRLB8314PBFCopy |
| Manufacturer Standard Lead Time | 52 weeks |
| Order Code | 2617411 |
| Product Range | HEXFET Series |
| Also Known As | SP001572766 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | RM10.990 |
| 10+ | RM5.390 |
| 100+ | RM4.800 |
| 500+ | RM3.850 |
| 1000+ | RM3.290 |
| 5000+ | RM3.230 |
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Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRLB8314PBFCopy |
| Manufacturer Standard Lead Time | 52 weeks |
| Order Code | 2617411 |
| Product Range | HEXFET Series |
| Also Known As | SP001572766 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 30V |
| Continuous Drain Current Id | 171A |
| Drain Source On State Resistance | 2400µohm |
| Transistor Case Style | TO-220AB |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 2.2V |
| Power Dissipation | 125W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | HEXFET Series |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (04-Feb-2026) |
Product Overview
IRLB8314PBF is a HEXFET® power MOSFET. Application includes optimized for UPS/inverter applications, low voltage power tools.
- Best in Class performance for UPS/Inverter applications
- Ultra-low gate impedance, fully characterized avalanche voltage and current
- Static drain-to-source on-resistance is 1.9mohm typ (VGS = 10V, ID = 68A, TJ = 25°C)
- Total gate charge is 40nC typ (VDS = 15V, VGS = 4.5V, ID = 68A, TJ = 25°C)
- Drain-to-source breakdown voltage is 30V min (VGS = 0V, ID = 250µA, TJ = 25°C)
- Turn-on delay time is 19ns typ (VDD = 15V, TJ = 25°C)
- Turn-off delay time is 32ns typ (VDD = 15V, TJ = 25°C)
- Input capacitance is 5050pF typ (VGS = 0V, TJ = 25°C)
- Output capacitance is 890pF typ (VGS = 0V, TJ = 25°C)
- TO-220AB package, operating junction temperature range from -55 to + 175°C
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 171A |
| Transistor Case Style | TO-220AB |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 125W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (04-Feb-2026) |
| Drain Source Voltage Vds | 30V |
|---|---|
| Drain Source On State Resistance | 2400µohm |
| Transistor Mounting | Through Hole |
| Gate Source Threshold Voltage Max | 2.2V |
| No. of Pins | 3Pins |
| Product Range | HEXFET Series |
| MSL | - |
Technical Docs (3)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (04-Feb-2026) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .005534 |