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SPB80P06PGATMA1
Power MOSFET, P Channel, 60 V, 80 A, 0.023 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoSPB80P06PGATMA1Copy
Manufacturer Standard Lead Time52 weeks
Order Code
Re-Reel2212850RL
Cut Tape2212850
Also Known AsSPB80P06P G, SP000096088
Your Part Number
Available to Order
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | RM29.010 | RM29.01 |
| Total Price | RM29.01 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | RM29.010 |
| 10+ | RM18.990 |
| 100+ | RM14.000 |
| 500+ | RM12.410 |
| 1000+ | RM11.010 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoSPB80P06PGATMA1Copy
Manufacturer Standard Lead Time52 weeks
Order Code
Re-Reel2212850RL
Cut Tape2212850
Also Known AsSPB80P06P G, SP000096088
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id80A
Drain Source On State Resistance0.023ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation340W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SPB80P06P G is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics.
- Enhancement mode
- Avalanche rated
- dv/dt Rated
- AEC-Q101 qualified
Applications
Automotive, Consumer Electronics, Power Management, Motor Drive & Control, Computers & Computer Peripherals
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
340W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.023ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00181