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IXTN40P50P
MOSFET Transistor, P Channel, 40 A, 500 V, 0.23 ohm, 10 V, 4.5 V
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| Quantity | Price |
|---|---|
| 1+ | RM160.430 |
| 5+ | RM148.050 |
| 10+ | RM135.660 |
| 50+ | RM135.650 |
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Multiple: 1
RM160.43
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTN40P50P
Order Code3930196
Technical Datasheet
Channel TypeP Channel
Continuous Drain Current Id40A
Drain Source Voltage Vds500V
Drain Source On State Resistance0.23ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation890W
Operating Temperature Max150°C
Product Range-
Product Overview
P-channel enhancement mode avalanche rated PolarP™ power MOSFET suitable for use in high-side switches, push pull amplifiers, DC choppers, automatic test equipment, current regulators applications.
- miniBLOC with aluminium nitride isolation
- Rugged PolarP™ process
- Low package inductance
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
500V
Rds(on) Test Voltage
10V
Power Dissipation
890W
Product Range
-
Continuous Drain Current Id
40A
Drain Source On State Resistance
0.23ohm
Gate Source Threshold Voltage Max
4.5V
Operating Temperature Max
150°C
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001