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PMGD280UN,115
Dual MOSFET, N Channel, 20 V, 200 mA, 0.28 ohm
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | NEXPERIA |
|---|---|
| Manufacturer Part No | PMGD280UN,115Copy |
| Manufacturer Standard Lead Time | 54 weeks |
| Order Code | Full Reel2439738 Cut Tape1758098 Cut Tape1758098RL |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 100 | RM1.250 | RM125.00 |
| Total Price | RM125.00 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 100+ | RM1.250 |
| 500+ | RM0.922 |
| 1500+ | RM0.880 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | RM0.562 |
| 9000+ | RM0.551 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | NEXPERIA |
|---|---|
| Manufacturer Part No | PMGD280UN,115Copy |
| Manufacturer Standard Lead Time | 54 weeks |
| Order Code | Full Reel2439738 Cut Tape1758098 Cut Tape1758098RL |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds N Channel | 20V |
| Drain Source Voltage Vds P Channel | - |
| Continuous Drain Current Id N Channel | 200mA |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance N Channel | 0.28ohm |
| Drain Source On State Resistance P Channel | - |
| Transistor Case Style | SOT-363 |
| No. of Pins | 6Pins |
| Power Dissipation N Channel | 400mW |
| Power Dissipation P Channel | - |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The PMGD280UN,115 is a dual N-channel enhancement-mode FET in a surface-mount plastic package using TrenchMOS™ technology. It is suitable for driver circuits and switching in portable appliances applications. The device offers 40% smaller footprint.
- Fast switching speed
- Low ON-state resistance
- Low threshold voltage
Applications
Industrial, Portable Devices, Power Management
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds P Channel | - |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance P Channel | - |
| No. of Pins | 6Pins |
| Power Dissipation P Channel | - |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| Drain Source Voltage Vds N Channel | 20V |
|---|---|
| Continuous Drain Current Id N Channel | 200mA |
| Drain Source On State Resistance N Channel | 0.28ohm |
| Transistor Case Style | SOT-363 |
| Power Dissipation N Channel | 400mW |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (2)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Malaysia Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000907 |