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Quantity | Price |
---|---|
5+ | RM1.090 |
10+ | RM0.440 |
100+ | RM0.277 |
500+ | RM0.262 |
1000+ | RM0.260 |
5000+ | RM0.258 |
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Multiple: 5
RM5.45
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBSS138LT3G
Order Code2101819
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id200mA
Drain Source On State Resistance5.6ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage2.75V
Gate Source Threshold Voltage Max500mV
Power Dissipation225mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BSS138LT3G is a N-channel Power MOSFET with low threshold voltage and ideal for low voltage applications. Miniature surface mount package saves board space.
- ±20VDC Continuous gate-to-source voltage
- 556°C/W Junction-to-ambient thermal resistance
Applications
Power Management, Consumer Electronics, Computers & Computer Peripherals
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
200mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
2.75V
Power Dissipation
225mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
50V
Drain Source On State Resistance
5.6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
500mV
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006