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FCB20N60

Name: Power MOSFET, N Channel, 600 V, 20 A, 0.15 ohm, TO-263 (D2PAK), Surface Mount
Brand: ONSEMI
SKU: 1095000
Availability: InStock

Power MOSFET, N Channel, 600 V, 20 A, 0.15 ohm, TO-263 (D2PAK), Surface Mount

Image is for illustrative purposes only. Please refer to product description.

ManufacturerONSEMI

Manufacturer Part NoFCB20N60

Order Code1095000

Technical Datasheet

Data Sheet

See all Technical Docs

1,472 In Stock

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Quantity	Price
1+	RM14.190
10+	RM11.200

Price for:Each (Supplied on Cut Tape)

Minimum: 1

Multiple: 1

RM14.19

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Product Information

ManufacturerONSEMI

Manufacturer Part NoFCB20N60

Order Code1095000

Technical Datasheet

Data Sheet

Channel TypeN Channel

Drain Source Voltage Vds600V

Continuous Drain Current Id20A

Drain Source On State Resistance0.15ohm

Transistor Case StyleTO-263 (D2PAK)

Transistor MountingSurface Mount

Rds(on) Test Voltage10V

Gate Source Threshold Voltage Max5V

Power Dissipation208W

No. of Pins3Pins

Operating Temperature Max150°C

Product Range-

Qualification-

MSLMSL 1 - Unlimited

SVHCLead (27-Jun-2024)

Product Overview

The FCB20N60 is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Ultra low gate charge (Qg = 75nC)
Low effective output capacitance (Coss.eff = 165pF)
100% avalanche tested

Applications

Industrial, Power Management, Communications & Networking, Lighting, Alternative Energy

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Technical Specifications

Channel Type

N Channel

Continuous Drain Current Id

20A

Transistor Case Style

TO-263 (D2PAK)

Rds(on) Test Voltage

10V

Power Dissipation

208W

Operating Temperature Max

150°C

Qualification

SVHC

Lead (27-Jun-2024)

Drain Source Voltage Vds

600V

Drain Source On State Resistance

0.15ohm

Transistor Mounting

Surface Mount

Gate Source Threshold Voltage Max

No. of Pins

3Pins

Product Range

MSL

MSL 1 - Unlimited

Technical Docs (1)

Technical Data Sheet EN

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Associated Products

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Legislation and Environmental

Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out

Tariff No:85412900

US ECCN:EAR99

EU ECCN:NLR

RoHS Compliant:Y-Ex

RoHS

RoHS Phthalates Compliant:Yes