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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE253G
Order Code1459091
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max100V
Continuous Collector Current4A
Power Dissipation15W
Transistor Case StyleTO-225
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency40MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Product Overview
The MJE253G is a -100V Silicon PNP Complementary Plastic Power Transistor designed for low power audio amplifier as well as low current and high speed switching applications.
- High collector-emitter sustaining voltage
- High DC current gain
- Low collector emitter saturation voltage
- High current gain bandwidth
- Annular construction for low leakages
Applications
Audio, Industrial
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
4A
Transistor Case Style
TO-225
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
100V
Power Dissipation
15W
Transistor Mounting
Through Hole
Transition Frequency
40MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000726