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MMBTH10-4LT1G
Bipolar - RF Transistor, NPN, 25 V, 800 MHz, 225 mW, 999 A, SOT-23
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| Quantity | Price |
|---|---|
| 5+ | RM0.235 |
| 50+ | RM0.220 |
| 100+ | RM0.204 |
| 500+ | RM0.189 |
| 1500+ | RM0.186 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
RM1.17
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBTH10-4LT1G
Order Code2774795
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max25V
Transition Frequency800MHz
Power Dissipation225mW
Continuous Collector Current999A
Transistor Case StyleSOT-23
No. of Pins3Pins
DC Current Gain hFE Min120hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
NPN
Transition Frequency
800MHz
Continuous Collector Current
999A
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
25V
Power Dissipation
225mW
Transistor Case Style
SOT-23
DC Current Gain hFE Min
120hFE
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536