NDS355AN
Power MOSFET, N Channel, 30 V, 1.7 A, 0.085 ohm, SOT-23, Surface Mount
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | RM2.400 | RM12.00 |
| Total Price | RM12.00 | ||
| Quantity | Price |
|---|---|
| 5+ | RM2.400 |
| 50+ | RM1.980 |
| 100+ | RM1.560 |
| 500+ | RM1.070 |
| 1500+ | RM1.050 |
| Quantity | Price |
|---|---|
| 3000+ | RM1.020 |
| 9000+ | RM1.000 |
Product Information
Product Overview
The NDS355AN is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications in PCMCIA cards, other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface-mount package. It comes with industry standard outline surface-mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
- High density cell design for extremely low RDS (ON)
- Exceptional ON-resistance and maximum DC current capability
Technical Specifications
N Channel
1.7A
SOT-23
10V
500mW
150°C
-
No SVHC (25-Jun-2025)
30V
0.085ohm
Surface Mount
1.6V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate