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NTJD4105CT1G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 630 mA, 630 mA, 0.29 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTJD4105CT1GCopy
Manufacturer Standard Lead Time14 weeks
Order Code
Full Reel2317896
Re-Reel2464121RL
Cut Tape2464121
Your Part Number
4,695 In Stock
Need more?
4,695 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | RM1.170 | RM5.85 |
| Total Price | RM5.85 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | RM1.170 |
| 50+ | RM0.950 |
| 100+ | RM0.729 |
| 500+ | RM0.477 |
| 1500+ | RM0.468 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | RM0.392 |
| 9000+ | RM0.385 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTJD4105CT1GCopy
Manufacturer Standard Lead Time14 weeks
Order Code
Full Reel2317896
Re-Reel2464121RL
Cut Tape2464121
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel630mA
Continuous Drain Current Id P Channel630mA
Drain Source On State Resistance N Channel0.29ohm
Drain Source On State Resistance P Channel0.29ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel270mW
Power Dissipation P Channel270mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NTJD4105CT1G is a -8/20V P and N-channel Small Signal MOSFET designed with low RDS(on) for minimum footprint and increased circuit efficiency. The low RDS (on) performance is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras and PDAs.
- Complementary N and P channel device
- Leading -8V trench for low RDS(on) performance
- ESD protected gate- Class 1 ESD rating
- 460°C/W Thermal resistance, junction to ambient
Applications
Communications & Networking, Consumer Electronics, Computers & Computer Peripherals, Multimedia
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
630mA
Drain Source On State Resistance P Channel
0.29ohm
No. of Pins
6Pins
Power Dissipation P Channel
270mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
630mA
Drain Source On State Resistance N Channel
0.29ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
270mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Alternatives for NTJD4105CT1G
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006