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SI4435DY.

Power MOSFET, P Channel, 30 V, 8.8 A, 0.015 ohm, SOIC, Surface Mount

ON SEMICONDUCTOR SI4435DY.

Image is for illustrative purposes only. Please refer to product description.

Manufacturer Part No:
SI4435DY.
Order Code:
1653655
Technical Datasheet:
SI4435DY.   Datasheet
See all Technical Docs

Product Overview

The SI4435DY is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
  • Low gate charge
  • High performance trench technology for extremely low RDS (on)
  • High power and current handling capability

Product Information

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:
P Channel

:
30V

:
8.8A

:
0.015ohm

:
SOIC

:
Surface Mount

:
10V

:
1.7V

:
2.5W

:
8Pins

:
175°C

:
-

:
-

:
-
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Technical Docs (1)

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