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MMUN2233LT1G
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm
Image is for illustrative purposes only. Please refer to product description.

| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | MMUN2233LT1GCopy |
| Manufacturer Standard Lead Time | 16 weeks |
| Order Code | Full Reel2317870 Re-Reel1651085RL Cut Tape1651085 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | RM0.396 | RM1.98 |
| Total Price | RM1.98 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | RM0.396 |
| 50+ | RM0.323 |
| 100+ | RM0.249 |
| 500+ | RM0.157 |
| 1500+ | RM0.154 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | RM0.142 |
| 9000+ | RM0.140 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | MMUN2233LT1GCopy |
| Manufacturer Standard Lead Time | 16 weeks |
| Order Code | Full Reel2317870 Re-Reel1651085RL Cut Tape1651085 |
| Technical Datasheet | |
| Digital Transistor Polarity | Single NPN |
| Transistor Polarity | Single NPN |
| Collector Emitter Voltage Max NPN | 50V |
| Collector Emitter Voltage V(br)ceo | 50V |
| Collector Emitter Voltage Max PNP | - |
| Continuous Collector Current Ic | 100mA |
| Continuous Collector Current | 100mA |
| Base Input Resistor R1 | 4.7kohm |
| Resistor Ratio, R1 / R2 | 0.1(Ratio) |
| Base Emitter Resistor R2 | 47kohm |
| RF Transistor Case | SOT-23 |
| Transistor Case Style | SOT-23 |
| No. of Pins | 3 Pin |
| Transistor Mounting | Surface Mount |
| Power Dissipation | 400mW |
| Operating Temperature Max | 150°C |
| DC Current Gain hFE Min | 80hFE |
| Product Range | - |
| Qualification | - |
| Automotive Qualification Standard | AEC-Q101 |
| MSL | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
MMUN2233LT1G is an MMUN2233L series NPN transistor with a monolithic bias resistor network digital transistor. It is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
- Simplifies circuit design, reduces board space, reduces component count
- Collector-base voltage is 50VDC max (TA = 25°C, common for Q1 and Q2)
- Collector-emitter voltage is 50VDC max (TA = 25°C, common for Q1 and Q2)
- Collector current - continuous is 100mAdc max (TA = 25°C, common for Q1 and Q2)
- Input forward voltage is 30VDC max (TA = 25°C, common for Q1 and Q2)
- Input reverse voltage is 5VDC max (TA = 25°C, common for Q1 and Q2)
- Total device dissipation is 230mW max (TA = 25°C)
- DC current gain is 200 (IC = 5.0mA, VCE = 10V, TA = 25°C)
- Input resistor range from 3.3 to 6.1kohm (TA = 25°C, common for Q1 and Q2)
- SOT-23 package, junction temperature range from -55 to +150°C
Technical Specifications
| Digital Transistor Polarity | Single NPN |
|---|---|
| Collector Emitter Voltage Max NPN | 50V |
| Collector Emitter Voltage Max PNP | - |
| Continuous Collector Current | 100mA |
| Resistor Ratio, R1 / R2 | 0.1(Ratio) |
| RF Transistor Case | SOT-23 |
| No. of Pins | 3 Pin |
| Power Dissipation | 400mW |
| DC Current Gain hFE Min | 80hFE |
| Qualification | - |
| MSL | - |
| Transistor Polarity | Single NPN |
|---|---|
| Collector Emitter Voltage V(br)ceo | 50V |
| Continuous Collector Current Ic | 100mA |
| Base Input Resistor R1 | 4.7kohm |
| Base Emitter Resistor R2 | 47kohm |
| Transistor Case Style | SOT-23 |
| Transistor Mounting | Surface Mount |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Automotive Qualification Standard | AEC-Q101 |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (2)
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412100 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000091 |
