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SKM100GB125DN
IGBT Module, Half Bridge, 100 A, 3.3 V, 150 °C, Module
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| Quantity | Price |
|---|---|
| 1+ | RM954.660 |
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RM954.66
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Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM100GB125DN
Order Code2423681
Technical Datasheet
IGBT ConfigurationHalf Bridge
Power Dissipation-
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT IGBT [Ultrafast]
Transistor MountingPanel
Product Range-
Product Overview
The SKM100GB125DN is a 1200V N-channel Ultra Fast IGBT Module with fast and soft inverse CAL diodes. This transistor is ideal for resonant inverters up to 100kHz and Electronic welders as well inductive heating.
- Low inductance
- Short tail current with low temperature dependence
- High short circuit capability
- Isolated copper baseplate using DCB (Direct Copper Bonding) technology
- Large clearance (10mm) and creepage distances (20mm)
Applications
Power Management, Industrial
Warnings
ESD sensitive device, take proper precaution while handling the device. Due to technical requirements, component may contain dangerous substances.
Technical Specifications
IGBT Configuration
Half Bridge
IGBT Termination
Stud
IGBT Technology
NPT IGBT [Ultrafast]
Product Range
-
Power Dissipation
-
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Italy
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Italy
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.18