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SKM200GB125D
IGBT Module, Half Bridge, 200 A, 3.3 V, 150 °C, Module
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| Quantity | Price |
|---|---|
| 1+ | RM1,880.290 |
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RM1,880.29
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Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM200GB125D
Order Code2423692
Technical Datasheet
IGBT ConfigurationHalf Bridge
Power Dissipation-
IGBT TerminationStud
IGBT TechnologyNPT IGBT [Ultrafast]
Transistor MountingPanel
Product Range-
Product Overview
The SKM200GB125D is a SEMITRANS® 3 ultrafast IGBT Module for use with inductive heating and resonant inverters up to 100kHz. It features isolated copper base plate using DCB (Direct Copper Bonding) technology and short tail current with low temperature dependence.
- Half-bridge switch
- N channel, homogeneous Si
- Low inductance case
- High short-circuit capability, self limiting to 6 x IC
- Fast and soft inverse CAL diodes
- Large clearance (13mm) and creepage distance (20mm)
Technical Specifications
IGBT Configuration
Half Bridge
IGBT Termination
Stud
Transistor Mounting
Panel
Power Dissipation
-
IGBT Technology
NPT IGBT [Ultrafast]
Product Range
-
Technical Docs (3)
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Associated Products
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Slovak Republic
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Slovak Republic
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.18