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No Longer Stocked
Product Information
ManufacturerSOLID STATE
Manufacturer Part NoPMD16K100
Order Code1863026
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd225W
DC Collector Current20A
RF Transistor CaseTO-3
No. of Pins3Pins
DC Current Gain hFE1000hFE
Transistor MountingThrough Hole
Operating Temperature Max200°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The PMD16K100 is a 100V Silicon NPN Darlington Power Transistor having monolithic epitaxial base structures with built-in base to emitter shunt resistors. The transistor is CVD glass passivated to increase reliability and provide reduced high temperature reverse leakage current. Internal diode protection of the Darlington configuration is built into the structure to limit the device power dissipation during negative overshoot.
- Low thermal resistance for more useable power
- Hermetically sealed
Applications
Industrial
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
225W
RF Transistor Case
TO-3
DC Current Gain hFE
1000hFE
Operating Temperature Max
200°C
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
20A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000766