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GD650HFX170P1S
IGBT Module, Half Bridge, 1.073 kA, 1.9 V, 4.2 kW, 150 °C, Module
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| Quantity | Price |
|---|---|
| 1+ | RM1,828.350 |
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Multiple: 1
RM1,828.35
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Product Information
ManufacturerSTARPOWER
Manufacturer Part NoGD650HFX170P1S
Order Code3549271
Technical Datasheet
IGBT ConfigurationHalf Bridge
Continuous Collector Current1.073kA
Collector Emitter Saturation Voltage1.9V
Power Dissipation4.2kW
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max1.7kV
IGBT TechnologyTrench Field Stop
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
IGBT Configuration
Half Bridge
Collector Emitter Saturation Voltage
1.9V
Operating Temperature Max
150°C
IGBT Termination
Stud
IGBT Technology
Trench Field Stop
Product Range
-
Continuous Collector Current
1.073kA
Power Dissipation
4.2kW
Transistor Case Style
Module
Collector Emitter Voltage Max
1.7kV
Transistor Mounting
Panel
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.2