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BUV20
Bipolar (BJT) Single Transistor, General Purpose, NPN, 125 V, 50 A, 250 W, TO-3, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBUV20
Order Code1175680
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max125V
Continuous Collector Current50A
Power Dissipation250W
Transistor Case StyleTO-3
Transistor MountingThrough Hole
No. of Pins2Pins
Transition Frequency8MHz
DC Current Gain hFE Min60hFE
Operating Temperature Max200°C
Product Range-
Qualification-
MSL-
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
50A
Transistor Case Style
TO-3
No. of Pins
2Pins
DC Current Gain hFE Min
60hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
125V
Power Dissipation
250W
Transistor Mounting
Through Hole
Transition Frequency
8MHz
Operating Temperature Max
200°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0115