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MJD122-1
Bipolar Transistor Array, Dual NPN, 8 A, 20 W
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| Quantity | Price |
|---|---|
| 1+ | RM6.920 |
| 10+ | RM2.860 |
| 100+ | RM2.630 |
| 500+ | RM2.400 |
| 1000+ | RM2.100 |
| 5000+ | RM1.860 |
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Multiple: 1
RM6.92
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoMJD122-1
Order Code4036346
Technical Datasheet
Transistor PolarityDual NPN
Collector Emitter Voltage Max NPN-
Collector Emitter Voltage Max PNP-
Continuous Collector Current NPN8A
Continuous Collector Current PNP-
Power Dissipation NPN20W
Power Dissipation PNP-
DC Current Gain hFE Min NPN100hFE
DC Current Gain hFE Min PNP-
Transistor Case StyleTO-251 (IPAK)
No. of Pins3Pins
Transistor MountingThrough Hole
Operating Temperature Max150°C
Transition Frequency NPN-
Transition Frequency PNP-
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
Dual NPN
Collector Emitter Voltage Max PNP
-
Continuous Collector Current PNP
-
Power Dissipation PNP
-
DC Current Gain hFE Min PNP
-
No. of Pins
3Pins
Operating Temperature Max
150°C
Transition Frequency PNP
-
Qualification
-
Collector Emitter Voltage Max NPN
-
Continuous Collector Current NPN
8A
Power Dissipation NPN
20W
DC Current Gain hFE Min NPN
100hFE
Transistor Case Style
TO-251 (IPAK)
Transistor Mounting
Through Hole
Transition Frequency NPN
-
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00031