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STGW75H65DFB2-4
IGBT, 115 A, 1.55 V, 357 W, 650 V, TO-247, 4 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTGW75H65DFB2-4
Order Code3581059
Product RangeHB2
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 18 week(s)
Notify me when back in stock
| Quantity | Price |
|---|---|
| 1+ | RM28.810 |
| 5+ | RM25.490 |
| 10+ | RM22.170 |
| 50+ | RM21.730 |
| 100+ | RM21.290 |
| 250+ | RM20.840 |
Price for:Each
Minimum: 1
Multiple: 1
RM28.81
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTGW75H65DFB2-4
Order Code3581059
Product RangeHB2
Technical Datasheet
Continuous Collector Current115A
Collector Emitter Saturation Voltage1.55V
Power Dissipation357W
Collector Emitter Voltage Max650V
Transistor Case StyleTO-247
No. of Pins4Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product RangeHB2
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Continuous Collector Current
115A
Power Dissipation
357W
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
HB2
Collector Emitter Saturation Voltage
1.55V
Collector Emitter Voltage Max
650V
No. of Pins
4Pins
Transistor Mounting
Through Hole
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00443