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STP5NK80Z
Power MOSFET, N Channel, 800 V, 4.3 A, 2.4 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | STMICROELECTRONICS |
|---|---|
| Manufacturer Part No | STP5NK80ZCopy |
| Manufacturer Standard Lead Time | 28 weeks |
| Order Code | 9512764 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | RM17.540 |
| 10+ | RM10.290 |
| 100+ | RM8.100 |
| 500+ | RM6.950 |
| 1000+ | RM6.260 |
| 5000+ | RM6.140 |
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RM17.54
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Product Information
| Manufacturer | STMICROELECTRONICS |
|---|---|
| Manufacturer Part No | STP5NK80ZCopy |
| Manufacturer Standard Lead Time | 28 weeks |
| Order Code | 9512764 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 800V |
| Continuous Drain Current Id | 4.3A |
| Drain Source On State Resistance | 2.4ohm |
| Transistor Case Style | TO-220 |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 3.75V |
| Power Dissipation | 110W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The STP5NK80Z is a 800V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- 100% Avalanche tested
- Gate charge minimized
- Very low intrinsic capacitance
- Very good manufacturing repeatability
Applications
Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 4.3A |
| Transistor Case Style | TO-220 |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 110W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 800V |
|---|---|
| Drain Source On State Resistance | 2.4ohm |
| Transistor Mounting | Through Hole |
| Gate Source Threshold Voltage Max | 3.75V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | - |
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .002 |