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IRFBE30PBF
Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | RM10.460 |
| 10+ | RM7.410 |
| 100+ | RM7.110 |
| 500+ | RM6.820 |
| 1000+ | RM4.910 |
| 5000+ | RM4.900 |
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Multiple: 1
RM10.46
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFBE30PBF
Order Code8648859
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id4.1A
Drain Source On State Resistance3ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
Product Overview
The IRFBE30PBF is a 800V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 150°C Operating temperature
- Easy to parallel
- Simple drive requirement
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4.1A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
3ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002