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SI2318CDS-T1-GE3
Power MOSFET, N Channel, 40 V, 3.9 A, 0.036 ohm, TO-236, Surface Mount
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| Quantity | Price |
|---|---|
| 5+ | RM1.360 |
| 50+ | RM1.120 |
| 100+ | RM0.869 |
| 500+ | RM0.689 |
| 1500+ | RM0.675 |
| 3000+ | RM0.642 |
| 7500+ | RM0.608 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
RM6.80
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2318CDS-T1-GE3
Order Code1838989
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id3.9A
Drain Source On State Resistance0.036ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (07-Nov-2024)
Product Overview
- N-channel 40V (D-S) TrenchFET® power MOSFET
- 100% Rg tested
- Used in DC/DC converters, load switch
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3.9A
Transistor Case Style
TO-236
Rds(on) Test Voltage
10V
Power Dissipation
750mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.036ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001