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SIA519EDJ-T1-GE3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 4.5 A, 4.5 A, 0.053 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIA519EDJ-T1-GE3Copy
Manufacturer Standard Lead Time20 weeks
Order Code
Re-Reel2335390RL
Cut Tape2335390
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
Notify me when back in stock
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | RM5.370 | RM5.37 |
| Total Price | RM5.37 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | RM5.370 |
| 10+ | RM3.830 |
| 100+ | RM2.390 |
| 500+ | RM1.640 |
| 1000+ | RM1.250 |
| 5000+ | RM1.230 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA519EDJ-T1-GE3Copy
Manufacturer Standard Lead Time20 weeks
Order Code
Re-Reel2335390RL
Cut Tape2335390
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel4.5A
Drain Source On State Resistance N Channel0.053ohm
Drain Source On State Resistance P Channel0.053ohm
Transistor Case StylePowerPAK SC-70
No. of Pins6Pins
Power Dissipation N Channel7.8W
Power Dissipation P Channel7.8W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
The SIA519EDJ-T1-GE3 is a N/P-channel MOSFET housed in a surface-mount package.
- Halogen-free
- TrenchFET® power MOSFET
- Typical ESD protection
- 100% Rg tested
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance P Channel
0.053ohm
No. of Pins
6Pins
Power Dissipation P Channel
7.8W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
4.5A
Drain Source On State Resistance N Channel
0.053ohm
Transistor Case Style
PowerPAK SC-70
Power Dissipation N Channel
7.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454