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SIA918EDJ-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 4.5 A, 4.5 A, 0.046 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIA918EDJ-T1-GE3Copy
Manufacturer Standard Lead Time54 weeks
Order Code
Re-Reel3929257RL
Cut Tape3929257
Product RangeTrenchFET Series
Your Part Number
48 In Stock
12,000 more incoming. You can reserve stock now
48 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 5 | RM4.150 | RM20.75 |
| Total Price | RM20.75 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | RM4.150 |
| 10+ | RM1.900 |
| 100+ | RM1.680 |
| 500+ | RM1.280 |
| 1000+ | RM0.970 |
| 5000+ | RM0.954 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA918EDJ-T1-GE3Copy
Manufacturer Standard Lead Time54 weeks
Order Code
Re-Reel3929257RL
Cut Tape3929257
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id4.5A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.046ohm
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel4.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.046ohm
Drain Source On State Resistance P Channel0.046ohm
Rds(on) Test Voltage4.5V
Transistor Case StylePowerPAK SC-70
Gate Source Threshold Voltage Max900mV
Power Dissipation Pd7.8W
No. of Pins6Pins
Power Dissipation N Channel7.8W
Power Dissipation P Channel7.8W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
4.5A
On Resistance Rds(on)
0.046ohm
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance N Channel
0.046ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
900mV
No. of Pins
6Pins
Power Dissipation P Channel
7.8W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
4.5A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.046ohm
Transistor Case Style
PowerPAK SC-70
Power Dissipation Pd
7.8W
Power Dissipation N Channel
7.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001