Print Page
SIR510DP-T1-RE3
Power MOSFET, N Channel, 100 V, 126 A, 0.003 ohm, PowerPAK SO, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIR510DP-T1-RE3
Order Code3677856
Product RangeTrenchFET Gen V
Technical Datasheet
9,015 In Stock
Need more?
9015 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | RM12.530 |
| 10+ | RM9.480 |
| 100+ | RM6.860 |
| 500+ | RM5.350 |
| 1000+ | RM4.980 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
RM62.65
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR510DP-T1-RE3
Order Code3677856
Product RangeTrenchFET Gen V
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id126A
Drain Source On State Resistance0.003ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen V
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Product Overview
N-channel 100V (D-S) MOSFET in PowerPAK SO-8 package is typically used in synchronous rectification, primary side switch, DC/DC converter, OR-ing and hot swap switch, power supplies, motor drive control and battery management applications.
- TrenchFET® Gen V power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Tuned for the lowest RDS x Qoss FOM
- 100% Rg and UIS tested
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
126A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
104W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.003ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
TrenchFET Gen V
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005