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SQD30N05-20L_GE3
Power MOSFET, N Channel, 55 V, 30 A, 0.02 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSQD30N05-20L_GE3
Order Code1869909
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | RM10.080 |
| 10+ | RM8.730 |
| 100+ | RM6.870 |
| 250+ | RM5.950 |
| 500+ | RM5.430 |
| 1000+ | RM5.320 |
| 2000+ | RM5.210 |
| 6000+ | RM5.110 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQD30N05-20L_GE3
Order Code1869909
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id30A
Drain Source On State Resistance0.02ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation-
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCLead (21-Jan-2025)
Product Overview
Applications
Automotive
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
-
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.02ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003